FDB8860 n-channel logi c level powertrench ? mosfet FDB8860 r ev a2 www.fairchildsemi.com 1 FDB8860 n-channel logic level powertrench ? mosfet 30v, 80a, 2.6 m features ? r ds(on) = 1.9m (typ), v gs = 5v, i d = 80a ? q g(5) = 89nc (typ), v gs = 5v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? rohs compliant applications ? dc-dc converters december 2010 ?2010 fairchild semiconductor corporation FDB8860 rev.a2
FDB8860 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v 30 - - v i dss zero gate voltage drain current v ds = 24v v gs = 0v - - 1 a t j = 150 c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a 1 1.7 3 v r ds( on) drain to source on resistance i d = 80a, v gs = 10v - 1.6 2.3 m i d = 80a, v gs = 5v - 1.9 2.6 i d = 80a, v gs = 4.5v - 2.1 2.7 i d = 80a, v gs = 10v, t j = 175 c - 2.5 3.6 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 9460 12585 pf c oss output capacitance - 1710 2275 pf c rss reverse transfer capacitance - 1050 1575 pf r g gate resistance f = 1mhz - 1.8 - q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 80a i g = 1.0ma - 165 214 nc q g(5) total gate charge at 5v v gs = 0v to 5v - 89 115 nc q g(th) threshold gate charge v gs = 0v to 1v - 9.1 12 nc q gs gate to source gate charge - 26 - nc q gs2 gate charge threshold to plateau - 18 - nc q gd gate to drain ?miller? charge - 33 - nc mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v, t c < 163 o c) 80 a continuous (v gs = 5v, t c < 162 o c) 80 a continuous (v gs = 10v, t c = 25 o c, with r ja = 43 o c/w) 31 a pulsed figure 4 a e as s i n g l e p u l s e a v a l a n c h e e n e r g y ( n o t e 1 ) 9 4 7 mj p d power dissipation 254 w derate above 25 o c1.7 w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance junction to case 0.59 o c/w r ja thermal resistance junction to ambient (note 2) 62 o c/w r ja thermal resistance juncti on to ambient to-263,1in 2 copper pad area 43 o c/w device marking device package reel size tape width quantity FDB8860 FDB8860 to-263ab 330mm 24mm 800units ?2010 fairchild semiconductor corporation FDB8860 rev.a2
FDB8860 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 15v, i d = 80a v gs = 5v, r gs = 1 - - 340 ns t d(on) turn-on delay time - 14 - ns t r turn-on rise time - 213 - ns t d(off) turn-off delay time - 79 - ns t f turn-off fall time - 49 - ns t off turn-off time - - 192 ns v sd source to drain diode voltage i sd = 80a - - 1.25 v i sd = 40a - - 1.0 v t rr reverse recovery time i sd = 80a, di sd /dt = 100a/ s- - 43 ns q rr reverse recovery charge i sd = 80a, di sd /dt = 100a/ s- - 29 nc notes: 1: starting t j = 25 o c, l =0.47mh, i as = 64a , v dd = 30v, v gs = 10v. 2: pulse width = 100s ?2010 fairchild semiconductor corporation FDB8860 rev.a2
FDB8860 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 4 typical char acteristics t j = 25c unless otherwise noted figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximu m transient thermal impedance figure 4. peak current capability 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) 25 50 75 100 125 150 175 0 75 150 225 300 v gs = 10v v gs = 5v current limited by package i d , drain current (a) t c , case temperature ( o c ) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 normalized thermal impedance z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 duty cycle-descending order notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 i (pk) , peak current ( a ) t, pulse width (s) single pulse 3000 50 t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows: ?2010 fairchild semiconductor corporation FDB8860 rev.a2
FDB8860 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 5 figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. transfer characteristics figure 8. saturation characteristics figure 9. drain to source on-res i stance variation vs gate to source voltage figure 10. normalized drain to source on resistance vs junction temperature typical characteristics t j = 25c unless otherwise noted 110 0.1 1 10 100 1000 10us 10ms dc 100ms 1ms 100us i d , drain current(a) v ds , drain to source voltage(v) 60 limited by r ds(on) area may be operation in this t c = 25 o c t j = max rated single pulse by package current limited 0.1 1 10 100 1000 10000 1 10 100 starting t j = 150 o c i as , avalanche current (a) t av , time in avalanche (ms) starting t j = 25 o c 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 1.0 1.5 2.0 2.5 3.0 3.5 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) 0.00.20.40.60.81.0 0 20 40 60 80 100 120 v gs = 4v v gs = 10v v gs = 5v v gs = 3v pulse duration = 80 s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) 345678910 1.5 2.0 2.5 3.0 3.5 4.0 t j = 25 o c pulse duration = 80 s duty cycle=0.5% max r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage (v) i d = 40a t j = 175 o c -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 i d = 80a v gs = 10v pulse duration = 80 s duty cycle = 0.5% max t j , junction temperature ( o c ) normalized drain to source on-resistance ?2010 fairchild semiconductor corporation FDB8860 rev.a2
FDB8860 n-channel logi c level powertrench ? mosfet www.fairchildsemi.com 6 figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge vs gate to source voltage typical characteristics t j = 25c unless otherwise noted -80 -40 0 40 80 120 160 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized gate threshold voltage t j , junction temperature ( o c ) v gs = v ds i d = 250 a -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 normalized drain to source breakdown voltage t j , junction temperature ( o c ) i d = 1ma 0.1 1 10 1000 10000 30 c rss c oss capacitance (pf) v ds , drain to source voltage (v) c iss f = 1mhz v gs = 0v 500 20000 0 20406080100120140160180 0 2 4 6 8 10 i d = 1a v gs , gate to source voltage ( v ) q g , gate charge (nc) v dd = 15v i d = 80a ?2010 fairchild semiconductor corporation FDB8860 rev.a2
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specificati ons for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i51 ? www.fairchildsemi.com 7 ?2010 fairchild semiconductor corporation FDB8860 rev.a2
|
